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FDB045AN08A0 _ F085
N-Channel PowerTrench ? MOSFET
75V, 80A, 4.5m :
Features
? r DS(ON) = 3.9m : (Typ.), V GS = 10V, I D = 80A
? Q g (tot) = 92nC (Typ.), V GS = 10V
? Low Miller Charge
? Low Q RR Body Diode
? UIS Capability (Single Pulse and Repetitive Pulse)
? Qualified to AEC Q101
? RoHS Compliant
June 20 10
Applications
? 42V Automotive Load Control
? Starter / Alternator Systems
? Electronic Power Steering Systems
? Electronic Valve Train Systems
? DC-DC converters and Off-line UPS
? Distributed Power Architectures and VRMs
? Primary Switch for 24V and 48V systems
Formerly developmental type 82684
D
GATE
G
SOURCE
DRAIN
TO-263AB
(FLANGE)
S
FDB SERIES
MOSFET Maximum Ratings T C = 25°C unless otherwise noted
Symbol
V DSS
V GS
Drain to Source Voltage
Gate to Source Voltage
Parameter
Ratings
75
r 20
Units
V
V
Drain Current
I D
E AS
P D
Continuous (T C < 137 o C, V GS = 10V)
Continuous (T amb = 25 o C, V GS = 10V, with R T JA = 43 o C/W)
Pulsed
Single Pulse Avalanche Energy (Note 1)
Power dissipation
Derate above 25 o C
90
19
Figure 4
600
310
2.0
A
A
A
mJ
W
W/ o C
T J , T STG
Operating and Storage Temperature
-55 to 175
o
C
Thermal Characteristics
R T JC
Thermal Resistance Junction to Case TO-263
0.48
o
C/W
R T JA
Thermal Resistance Junction to Ambient TO-263 (Note 2)
62
o C/W
R T JA
Thermal Resistance Junction to Ambient TO-263, 1in 2 copper pad area
43
o
C/W
This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a
copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/
Reliability data can be found at: http://www.fairchildsemi.com/products/discrete/reliability/index.html.
All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems
certification.
?2010 Fairchild Semiconductor Corporation
FDB045AN08A0_F085 Rev. A
www.fairchildsemi.com
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